TSM3443CX6 RFG

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Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 20V 4.7A SOT26

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Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 20V 4.7A SOT26

Technical Specifications

Parameters and characteristics for this part

Specification	TSM3443CX6 RFG

Current - Continuous Drain (Id) @ 25°C	4.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	9 nC
Input Capacitance (Ciss) (Max) @ Vds	640 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	SOT-26
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Technology	FET Type	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
Taiwan Semiconductor Corporation TSM3443CX6 RFG	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	P-Channel	SOT-26	SOT-23-6	60 mOhm	640 pF	2 W	1.4 V	2.5 V 4.5 V	Surface Mount	12 V	4.7 A	9 nC

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General part information

P-Channel 20 V 4.7A (Ta) 2W (Ta) Surface Mount SOT-26

Technical documentation and resources

No documents available