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MOSFET P-CHANNEL 20V 4.7A SOT26
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Technology | FET Type | Supplier Device Package | Package / Case | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | -55 °C | 150 °C | 20 V | MOSFET (Metal Oxide) | P-Channel | SOT-26 | SOT-23-6 | 60 mOhm | 640 pF | 2 W | 1.4 V | 2.5 V 4.5 V | Surface Mount | 12 V | 4.7 A | 9 nC |