Specification	TK13A65U(STA4,Q,M)

Current - Continuous Drain (Id) (Ta)	13 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	17 nC
Input Capacitance (Ciss) (Max)	950 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Package Name	TO-220SIS
Power Dissipation (Max)	40 W
Rds On (Max)	0.38 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

TK13A65 Series

Part	Current - Continuous Drain (Id) (Ta)	Rds On (Max)	Operating Temperature	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Package / Case	Power Dissipation (Max)	Gate Charge (Max)	Package Name	Input Capacitance (Ciss) (Max)	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Mounting Type
Toshiba Semiconductor and Storage TK13A65U(STA4,Q,M)	13 A	0.38 Ohm	150 °C	MOSFET (Metal Oxide)	10 V	5 V	TO-220-3 Full Pack	40 W	17 nC	TO-220SIS	950 pF	30 V	N-Channel	650 V	Through Hole

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