TK13A65U(STA4,Q,M)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13A TO220SIS

Search across all available documentation for this part.

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK13A65U(STA4,Q,M)

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	950 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs [Max]	380 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Rds On (Max) @ Id, Vgs [Max]
Toshiba Semiconductor and Storage TK13A65U(STA4,Q,M)	N-Channel	10 V	30 V	13 A	650 V	TO-220-3 Full Pack	40 W	950 pF	150 °C	TO-220SIS	MOSFET (Metal Oxide)	17 nC	Through Hole	380 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 13A (Ta) 40W (Tc) Through Hole TO-220SIS

Technical documentation and resources