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MOSFET N-CH 650V 13A TO220SIS
| Part | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Package / Case | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature | Supplier Device Package | Technology | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | N-Channel | 10 V | 30 V | 13 A | 650 V | TO-220-3 Full Pack | 40 W | 950 pF | 150 °C | TO-220SIS | MOSFET (Metal Oxide) | 17 nC | Through Hole | 380 mOhm |