TK1R4S04PB,LXHQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 120A DPAK

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 120A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK1R4S04PB,LXHQ

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	103 nC
Input Capacitance (Ciss) (Max) @ Vds	5500 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	1.9 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Technology	Power Dissipation (Max)	Vgs (Max)	FET Type	Package / Case	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage TK1R4S04PB,LXHQ	MOSFET (Metal Oxide)	180 W	20 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.9 mOhm	120 A	5500 pF	103 nC	DPAK+	175 °C	40 V	6 V 10 V	Surface Mount	3 V

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General part information

N-Channel 40 V 120A (Ta) 180W (Tc) Surface Mount DPAK+

Technical documentation and resources