TK1R4S04PB Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
12V - 300V MOSFETS, N-CH MOSFET, 40 V, 120 A, 0.00135 Ω@10V, DPAK+
| Part | Vgs (Max) | Qualification | Vgs(th) (Max) | Rds On (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Package / Case | Technology | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Package Name | Power Dissipation (Max) | Grade | Input Capacitance (Ciss) (Max) | Gate Charge (Max) | Operating Temperature | Current - Continuous Drain (Id) (Ta) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 20 V | AEC-Q101 | 3 V | 1.9 mOhm | 40 V | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | 6 V | 10 V | DPAK+ | 180 W | Automotive | 5500 pF | 103 nC | 175 °C | 120 A | N-Channel |