PMV50UPE,215

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Nexperia USA Inc.

20 V, SINGLE P-CHANNEL TRENCH MOSFET

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PMV50UPE,215

Active

Nexperia USA Inc.

20 V, SINGLE P-CHANNEL TRENCH MOSFET

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMV50UPE Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMV50UPE,215

Current - Continuous Drain (Id) (Ta)	3.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	15.7 nC
Input Capacitance (Ciss) (Max)	24 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	TO-236AB
Power Dissipation (Max)	500 mW
Rds On (Max)	66 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	900 mV

PMV50UPE Series

20 V, single P-channel Trench MOSFET

Part	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	FET Type	Input Capacitance (Ciss) (Max)	Rds On (Max)	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Ta)	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package Name	Gate Charge (Max)	Vgs(th) (Max)
Nexperia USA Inc. PMV50UPE,215	-55 °C	150 °C	Surface Mount	P-Channel	24 pF	66 mOhm	MOSFET (Metal Oxide)	4.5 V	1.8 V	3.2 A	SC-59 SOT-23-3 TO-236-3	8 V	20 V	500 mW	TO-236AB	15.7 nC	900 mV