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20 V, single P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, single P-channel Trench MOSFET
20 V, single P-channel Trench MOSFET
| Part | Operating Temperature (Min) | Operating Temperature (Max) | Mounting Type | FET Type | Input Capacitance (Ciss) (Max) | Rds On (Max) | Technology | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Current - Continuous Drain (Id) (Ta) | Package / Case | Vgs (Max) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Package Name | Gate Charge (Max) | Vgs(th) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | -55 °C | 150 °C | Surface Mount | P-Channel | 24 pF | 66 mOhm | MOSFET (Metal Oxide) | 4.5 V | 1.8 V | 3.2 A | SC-59 SOT-23-3 TO-236-3 | 8 V | 20 V | 500 mW | TO-236AB | 15.7 nC | 900 mV |