2SB1117-AZ

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Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANS PNP

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2SB1117-AZ

Active

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANS PNP

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	2SB1117-AZ	2SB1117 Series

	-	-
Current - Collector (Ic) (Max) [Max]	3 A	3 A
Current - Collector Cutoff (Max) [Max]	100 nA	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	135	135
Frequency - Transition	280 MHz	280 MHz
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Package / Case	3-SSIP	3-SSIP
Power - Max [Max]	1 W	1 W
Transistor Type	PNP	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV	500 mV
Voltage - Collector Emitter Breakdown (Max)	25 V	25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	773	$ 0.39

2SB1117 Series

Bipolar Power Transistors

Part	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	Transistor Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Frequency - Transition	Mounting Type	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Package / Case
Renesas Electronics Corporation 2SB1117-T-AZ
Renesas Electronics Corporation 2SB1117-AZ	25 V	150 °C	PNP	100 nA	1 W	280 MHz	Through Hole	3 A	135	500 mV	3-SSIP

Description

General part information

2SB1117 Series

A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.

Documents

Technical documentation and resources

No documents available