2SB1117-T-AZ
ActiveRenesas Electronics Corporation
SMALL SIGNAL BIPOLAR TRANS PNP
Deep-Dive with AI
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2SB1117-T-AZ
ActiveRenesas Electronics Corporation
SMALL SIGNAL BIPOLAR TRANS PNP
Deep-Dive with AI
Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | 2SB1117-T-AZ | 2SB1117 Series |
|---|---|---|
| Current - Collector (Ic) (Max) | - | 3 A |
| Current - Collector Cutoff (Max) | - | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - | 135 |
| Frequency - Transition | - | 280 MHz |
| Mounting Type | - | Through Hole |
| null | - | |
| Operating Temperature | - | 150 °C |
| Package / Case | - | 3-SSIP |
| Power - Max | - | 1 W |
| Transistor Type | - | PNP |
| Vce Saturation (Max) @ Ib, Ic | - | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) | - | 25 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 773 | $ 0.39 | |
2SB1117 Series
Bipolar Power Transistors
| Part | Voltage - Collector Emitter Breakdown (Max) | Operating Temperature | Transistor Type | Current - Collector Cutoff (Max) [Max] | Power - Max [Max] | Frequency - Transition | Mounting Type | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Vce Saturation (Max) @ Ib, Ic | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation 2SB1117-T-AZ | |||||||||||
Renesas Electronics Corporation 2SB1117-AZ | 25 V | 150 °C | PNP | 100 nA | 1 W | 280 MHz | Through Hole | 3 A | 135 | 500 mV | 3-SSIP |
Description
General part information
2SB1117 Series
A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.
Documents
Technical documentation and resources
No documents available