SSM3J15F,LF

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Toshiba Semiconductor and Storage

MOSFET P-CH 30V 100MA S-MINI

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Toshiba Semiconductor and Storage

MOSFET P-CH 30V 100MA S-MINI

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J15F,LF

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	9.1 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	200 mW
Rds On (Max) @ Id, Vgs	12 Ohm
Supplier Device Package	S-Mini
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.7 V

Part	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Power Dissipation (Max)	Supplier Device Package	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature
Toshiba Semiconductor and Storage SSM3J15F,LF	SC-59 SOT-23-3 TO-236-3	P-Channel	9.1 pF	100 mA	30 V	4 V	2.5 V	200 mW	S-Mini	MOSFET (Metal Oxide)	20 V	1.7 V	12 Ohm	Surface Mount	150 °C
Toshiba Semiconductor and Storage SSM3J15CT(TPL3)	SC-101 SOT-883	P-Channel	9.1 pF	100 mA	30 V	4 V	2.5 V	100 mW	CST3	MOSFET (Metal Oxide)	20 V		12 Ohm	Surface Mount	150 °C

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General part information

P-Channel 30 V 100mA (Ta) 200mW (Ta) Surface Mount S-Mini

Technical documentation and resources