MOSFET P-CH 30V 100MA S-MINI
| Part | Package / Case | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Power Dissipation (Max) | Supplier Device Package | Technology | Vgs (Max) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Mounting Type | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | SC-59 SOT-23-3 TO-236-3 | P-Channel | 9.1 pF | 100 mA | 30 V | 4 V | 2.5 V | 200 mW | S-Mini | MOSFET (Metal Oxide) | 20 V | 1.7 V | 12 Ohm | Surface Mount | 150 °C |
Toshiba Semiconductor and Storage | SC-101 SOT-883 | P-Channel | 9.1 pF | 100 mA | 30 V | 4 V | 2.5 V | 100 mW | CST3 | MOSFET (Metal Oxide) | 20 V | 12 Ohm | Surface Mount | 150 °C |