TPS73719QDRBRQ1
ActiveAUTOMOTIVE 1A ULTRA-LOW-DROPOUT VOLTAGE REGULATOR WITH REVERSE CURRENT PROTECTION AND ENABLE 8-SON -40 TO 125
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TPS73719QDRBRQ1
ActiveAUTOMOTIVE 1A ULTRA-LOW-DROPOUT VOLTAGE REGULATOR WITH REVERSE CURRENT PROTECTION AND ENABLE 8-SON -40 TO 125
Technical Specifications
Parameters and characteristics for this part
| Specification | TPS73719QDRBRQ1 |
|---|---|
| Control Features | Enable |
| Current - Output | 1 A |
| Current - Quiescent (Iq) | 400 µA |
| Current - Supply (Max) [Max] | 1.3 mA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Number of Regulators | 1 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Output Configuration | Positive |
| Output Type | 27.03 °C/W |
| Package / Case | 8-VDFN Exposed Pad |
| Protection Features | Over Temperature, Reverse Polarity, Over Current |
| PSRR [Max] | 58 dB |
| PSRR [Min] | 37 dB |
| Qualification | AEC-Q100 |
| Supplier Device Package | 8-SON (3x3) |
| Voltage - Input (Max) [Max] | 5.5 V |
| Voltage - Output (Min/Fixed) | 1.9 V |
| Voltage Dropout (Max) [Max] | 0.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
TPS73719 Series
Automotive 1A ultra-low-dropout voltage regulator with reverse current protection and enable
| Part | Output Configuration | PSRR [Max] | PSRR [Min] | Current - Output | Grade | Qualification | Voltage - Input (Max) [Max] | Voltage - Output (Min/Fixed) | Current - Quiescent (Iq) | Current - Supply (Max) [Max] | Output Type | Supplier Device Package | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Control Features | Voltage Dropout (Max) [Max] | Number of Regulators | Protection Features |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments TPS73719QDRBRQ1The TPS737-Q1 linear low-dropout (LDO) voltage regulator uses an n-type field effect transistor (NMOS) pass transistor in a voltage-follower configuration. This topology is relatively insensitive to output capacitor value and ESR, allowing a wide variety of load configurations. Load transient response is excellent, even with a small 1µF ceramic output capacitor. The NMOS topology also allows very low dropout.
The TPS737-Q1 uses an advanced bipolar complementary metal-oxide semiconductor (BiCMOS) process. This process yields high precision and delivers very low dropout voltages and low ground pin current. Current consumption, when not enabled, is under 20nA and is designed for portable applications. This device is protected by thermal shutdown and foldback current limit.
The TPS737-Q1 linear low-dropout (LDO) voltage regulator uses an n-type field effect transistor (NMOS) pass transistor in a voltage-follower configuration. This topology is relatively insensitive to output capacitor value and ESR, allowing a wide variety of load configurations. Load transient response is excellent, even with a small 1µF ceramic output capacitor. The NMOS topology also allows very low dropout.
The TPS737-Q1 uses an advanced bipolar complementary metal-oxide semiconductor (BiCMOS) process. This process yields high precision and delivers very low dropout voltages and low ground pin current. Current consumption, when not enabled, is under 20nA and is designed for portable applications. This device is protected by thermal shutdown and foldback current limit. | Positive | 58 dB | 37 dB | 1 A | Automotive | AEC-Q100 | 5.5 V | 1.9 V | 400 µA | 1.3 mA | 27.03 °C/W | 8-SON (3x3) | 8-VDFN Exposed Pad | 125 °C | -40 °C | Surface Mount | Enable | 0.5 V | 1 | Over Current, Over Temperature, Reverse Polarity |
Description
General part information
TPS73719 Series
The TPS737-Q1 linear low-dropout (LDO) voltage regulator uses an n-type field effect transistor (NMOS) pass transistor in a voltage-follower configuration. This topology is relatively insensitive to output capacitor value and ESR, allowing a wide variety of load configurations. Load transient response is excellent, even with a small 1µF ceramic output capacitor. The NMOS topology also allows very low dropout.
The TPS737-Q1 uses an advanced bipolar complementary metal-oxide semiconductor (BiCMOS) process. This process yields high precision and delivers very low dropout voltages and low ground pin current. Current consumption, when not enabled, is under 20nA and is designed for portable applications. This device is protected by thermal shutdown and foldback current limit.
The TPS737-Q1 linear low-dropout (LDO) voltage regulator uses an n-type field effect transistor (NMOS) pass transistor in a voltage-follower configuration. This topology is relatively insensitive to output capacitor value and ESR, allowing a wide variety of load configurations. Load transient response is excellent, even with a small 1µF ceramic output capacitor. The NMOS topology also allows very low dropout.