The TPS737-Q1 linear low-dropout (LDO) voltage regulator uses an n-type field effect transistor (NMOS) pass transistor in a voltage-follower configuration. This topology is relatively insensitive to output capacitor value and ESR, allowing a wide variety of load configurations. Load transient response is excellent, even with a small 1µF ceramic output capacitor. The NMOS topology also allows very low dropout.

The TPS737-Q1 uses an advanced bipolar complementary metal-oxide semiconductor (BiCMOS) process. This process yields high precision and delivers very low dropout voltages and low ground pin current. Current consumption, when not enabled, is under 20nA and is designed for portable applications. This device is protected by thermal shutdown and foldback current limit.

The TPS737-Q1 linear low-dropout (LDO) voltage regulator uses an n-type field effect transistor (NMOS) pass transistor in a voltage-follower configuration. This topology is relatively insensitive to output capacitor value and ESR, allowing a wide variety of load configurations. Load transient response is excellent, even with a small 1µF ceramic output capacitor. The NMOS topology also allows very low dropout.Read more