Specification	2SA1162-O,LF

Current - Collector (Ic) (Max)	150 mA, 0.15 mA
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	200
Frequency - Transition	80 MHz
Mounting Type	Surface Mount
Operating Temperature	125 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	S-Mini
Power - Max	150 mW
Transistor Type	PNP
Vce Saturation (Max)	300 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

2SA1162 Series

Part	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max)	Power - Max	Current - Collector (Ic) (Max)	Current - Collector Cutoff (Max)	Package / Case	Frequency - Transition	Package Name	DC Current Gain (hFE) (Min)	Transistor Type	Operating Temperature	Grade	Qualification
Toshiba Semiconductor and Storage 2SA1162-GR,LF	Surface Mount	50 V	300 mV	150 mW	0.15 mA 150 mA	100 nA	SC-59 SOT-23-3 TO-236-3	80 MHz	S-Mini	200	PNP	125 °C
Toshiba Semiconductor and Storage 2SA1162-O,LF	Surface Mount	50 V	300 mV	150 mW	0.15 mA 150 mA	100 nA	SC-59 SOT-23-3 TO-236-3	80 MHz	S-Mini	200	PNP	125 °C
Toshiba Semiconductor and Storage 2SA1162S-Y, LF(D	Surface Mount	50 V	300 mV	150 mW	0.15 mA 150 mA	100 nA	SC-59 SOT-23-3 TO-236-3	80 MHz	S-Mini	120	PNP	125 °C
Toshiba Semiconductor and Storage 2SA1162-Y,LF	Surface Mount	50 V	300 mV	150 mW	0.15 mA 150 mA	100 µA	SC-59 SOT-23-3 TO-236-3	80 MHz	S-Mini	120	PNP	125 °C
Toshiba Semiconductor and Storage 2SA1162-Y,LXHF	Surface Mount	50 V	300 mV	200 mW	0.15 mA 150 mA	100 nA	SC-59 SOT-23-3 TO-236-3	80 MHz	S-Mini	120	PNP	125 °C	Automotive	AEC-Q101
Toshiba Semiconductor and Storage 2SA1162-O,LXHF	Surface Mount	50 V	300 mV	200 mW	0.15 mA 150 mA	100 nA	SC-59 SOT-23-3 TO-236-3	80 MHz	S-Mini	70	PNP	125 °C	Automotive	AEC-Q101
Toshiba Semiconductor and Storage 2SA1162S-Y,LF	Surface Mount	50 V	300 mV	150 mW	0.15 mA 150 mA	100 nA	SC-59 SOT-23-3 TO-236-3	80 MHz	S-Mini	70	PNP	125 °C
Toshiba Semiconductor and Storage 2SA1162-GR,LXHF	Surface Mount	50 V	300 mV	200 mW	0.15 mA 150 mA	100 nA	SC-59 SOT-23-3 TO-236-3	80 MHz	S-Mini	200	PNP	125 °C	Automotive	AEC-Q101