
2SA1162-Y,LXHF
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, PNP BIPOLAR TRANSISTOR, -50 V, -0.15 A, SOT-346(S-MINI)

2SA1162-Y,LXHF
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, PNP BIPOLAR TRANSISTOR, -50 V, -0.15 A, SOT-346(S-MINI)
Description
General part information
2SA1162 Series
BIPOLAR TRANSISTORS, PNP BIPOLAR TRANSISTOR, -50 V, -0.15 A, SOT-346(S-MINI)
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SA1162-Y,LXHF |
|---|---|
| Current - Collector (Ic) (Max) | 150 mA, 0.15 mA |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 120 |
| Frequency - Transition | 80 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 125 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | S-Mini |
| Power - Max | 200 mW |
| Qualification | AEC-Q101 |
| Transistor Type | PNP |
| Vce Saturation (Max) | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
2SA1162-Y,LXHF | Datasheet
Mini catalog Introduction to Toshiba small package Bipolar Transistors
Surface Mount Small Signal Transistor (BJT) Precautions for use
The thermal stability and thermal design:Bipolar Transistor Application Notes
The electrical characteristics and equivalent circuit:Bipolar Transistor Application Notes
The terms used in data sheets:Bipolar Transistor Application Notes
2SA1162 Data sheet/Japanese
The maximum ratings:Bipolar Transistor Application Notes
Selection Guide Small Signal 2025 Rev1.0