BSO615CGHUMA1

Obsolete

Infineon Technologies

MOSFET N/P-CH 60V 3.1A/2A 8DSO

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Obsolete

Infineon Technologies

MOSFET N/P-CH 60V 3.1A/2A 8DSO

Technical Specifications

Parameters and characteristics for this part

Specification	BSO615CGHUMA1

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	2 A, 3.1 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	22.5 nC
Input Capacitance (Ciss) (Max) @ Vds	380 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	110 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Vgs(th) (Max) @ Id	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Configuration	Mounting Type	Grade	Gate Charge (Qg) (Max) @ Vgs	Qualification
Infineon Technologies BSO615CGHUMA1	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	-55 °C	150 °C	60 V	110 mOhm	380 pF	Logic Level Gate	2 V	2 W	22.5 nC	2 A 3.1 A	N and P-Channel	Surface Mount
Infineon Technologies BSO615NGXUMA1	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	-55 °C	150 °C	60 V	150 mOhm	380 pF	Logic Level Gate	2 V	2 W		2.6 A	2 N-Channel (Dual)	Surface Mount	Automotive	20 nC	AEC-Q101
Infineon Technologies BSO615N	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	-55 °C	150 °C	60 V	150 mOhm	380 pF	Logic Level Gate	2 V	2 W		2.6 A	2 N-Channel (Dual)	Surface Mount		20 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 60V 3.1A, 2A 2W Surface Mount PG-DSO-8

Technical documentation and resources