BSO615 Series

Catalog

MOSFET N/P-CH 60V 3.1A/2A 8DSO

Part	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Vgs(th) (Max) @ Id	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Configuration	Mounting Type	Grade	Gate Charge (Qg) (Max) @ Vgs	Qualification
Infineon Technologies BSO615CGHUMA1	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	-55 °C	150 °C	60 V	110 mOhm	380 pF	Logic Level Gate	2 V	2 W	22.5 nC	2 A 3.1 A	N and P-Channel	Surface Mount
Infineon Technologies BSO615NGXUMA1	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	-55 °C	150 °C	60 V	150 mOhm	380 pF	Logic Level Gate	2 V	2 W		2.6 A	2 N-Channel (Dual)	Surface Mount	Automotive	20 nC	AEC-Q101
Infineon Technologies BSO615N	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	-55 °C	150 °C	60 V	150 mOhm	380 pF	Logic Level Gate	2 V	2 W		2.6 A	2 N-Channel (Dual)	Surface Mount		20 nC