Zenode.ai Logo
Beta
K
IPT111N20NFDATMA1 - H-PSOF-8-1

IPT111N20NFDATMA1

Active
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; TOLL HSOF-8 PACKAGE; 11.1 MOHM; FAST DIODE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
IPT111N20NFDATMA1 - H-PSOF-8-1

IPT111N20NFDATMA1

Active
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; TOLL HSOF-8 PACKAGE; 11.1 MOHM; FAST DIODE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPT111N20NFDATMA1
Current - Continuous Drain (Id) @ 25°C96 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]87 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]7000 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerSFN
Power Dissipation (Max) [Max]375 W
Rds On (Max) @ Id, Vgs11.1 mOhm
Supplier Device PackagePG-HSOF-8-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 8.66
10$ 5.92
100$ 4.37
500$ 3.93
Digi-Reel® 1$ 8.66
10$ 5.92
100$ 4.37
500$ 3.93
Tape & Reel (TR) 2000$ 3.93
NewarkEach (Supplied on Full Reel) 2000$ 3.85

Description

General part information

IPT111 Series

Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.

Documents

Technical documentation and resources