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OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; TOLL HSOF-8 PACKAGE; 11.1 MOHM; FAST DIODE
| Part | Technology | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | FET Type | Power Dissipation (Max) [Max] | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Mounting Type | Package / Case | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 10 V | 7000 pF | -55 °C | 175 ░C | 200 V | N-Channel | 375 W | PG-HSOF-8-1 | 96 A | 20 V | 87 nC | 4 V | Surface Mount | 8-PowerSFN | 11.1 mOhm |