PMXB350UPEZ

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Nexperia USA Inc.

POWER MOSFET, P CHANNEL, 20 V, 1.2 A, 0.35 OHM, DFN1010D, SURFACE MOUNT

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PMXB350UPEZ

Active

Nexperia USA Inc.

POWER MOSFET, P CHANNEL, 20 V, 1.2 A, 0.35 OHM, DFN1010D, SURFACE MOUNT

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Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

PMXB350 Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMXB350UPEZ

Current - Continuous Drain (Id) (Ta)	1.2 A
Drain to Source Voltage (Vdss)	20 V
FET Type	P-Channel
Gate Charge (Max)	2.3 nC
Input Capacitance (Ciss) (Max)	116 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	3-XDFN Exposed Pad
Package Name	DFN1010D-3
Power Dissipation (Max)	5.68 W, 360 mW
Rds On (Max)	447 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	950 mV

PMXB350 Series

20 V, P-channel Trench MOSFET

Part	Vgs(th) (Max)	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Ta)	FET Type	Rds On (Max)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Mounting Type	Technology	Package Name
Nexperia USA Inc. PMXB350UPEZ	950 mV	3-XDFN Exposed Pad	8 V	116 pF	1.2 A	P-Channel	447 mOhm	5.68 W 360 mW	-55 °C	150 °C	20 V	2.3 nC	Surface Mount	MOSFET (Metal Oxide)	DFN1010D-3