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20 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Vgs(th) (Max) | Package / Case | Vgs (Max) | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Ta) | FET Type | Rds On (Max) | Power Dissipation (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Max) | Mounting Type | Technology | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 950 mV | 3-XDFN Exposed Pad | 8 V | 116 pF | 1.2 A | P-Channel | 447 mOhm | 5.68 W 360 mW | -55 °C | 150 °C | 20 V | 2.3 nC | Surface Mount | MOSFET (Metal Oxide) | DFN1010D-3 |