SSM6J215FE(TE85L,F

Active

Toshiba Semiconductor and Storage

MOSFET P CH 20V 3.4A ES6

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

MOSFET P CH 20V 3.4A ES6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6J215FE(TE85L,F

Current - Continuous Drain (Id) @ 25°C	3.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10.4 nC
Input Capacitance (Ciss) (Max) @ Vds	630 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-666, SOT-563
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	59 mOhm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Operating Temperature	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage SSM6J215FE(TE85L,F	3.4 A	10.4 nC	ES6	SOT-563 SOT-666	Surface Mount	20 V	1.5 V 4.5 V	59 mOhm	8 V	P-Channel	150 °C	1 V	MOSFET (Metal Oxide)	500 mW	630 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 3.4A (Ta) 500mW (Ta) Surface Mount ES6

Technical documentation and resources