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MOSFET P CH 20V 3.4A ES6
| Part | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Package / Case | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (Max) | FET Type | Operating Temperature | Vgs(th) (Max) @ Id | Technology | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 3.4 A | 10.4 nC | ES6 | SOT-563 SOT-666 | Surface Mount | 20 V | 1.5 V 4.5 V | 59 mOhm | 8 V | P-Channel | 150 °C | 1 V | MOSFET (Metal Oxide) | 500 mW | 630 pF |