SSM6J215 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -3.4 A, 0.059 Ω@4.5V, SOT-563(ES6)
| Part | Package / Case | Operating Temperature | Input Capacitance (Ciss) (Max) | Vgs(th) (Max) | FET Type | Package Name | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs (Max) | Rds On (Max) | Technology | Current - Continuous Drain (Id) (Ta) | Mounting Type | Gate Charge (Max) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | SOT-563 SOT-666 | 150 °C | 630 pF | 1 V | P-Channel | ES6 | 4.5 V | 1.5 V | 8 V | 59 mOhm | MOSFET (Metal Oxide) | 3.4 A | Surface Mount | 10.4 nC | 20 V | 500 mW |