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STH13N120K5-2AG - STMICROELECTRONICS STH6N95K5-2

STH13N120K5-2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 1200 V, 0,62 OHM TYP., 12 A MDMESH K5 POWER MOSFET IN AN H2PAK-2 PACKAGE

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Search across all available documentation for this part.

DocumentsTN1378+17
STH13N120K5-2AG - STMICROELECTRONICS STH6N95K5-2

STH13N120K5-2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 1200 V, 0,62 OHM TYP., 12 A MDMESH K5 POWER MOSFET IN AN H2PAK-2 PACKAGE

Deep-Dive with AI

DocumentsTN1378+17

Technical Specifications

Parameters and characteristics for this part

SpecificationSTH13N120K5-2AG
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs44.2 nC
Input Capacitance (Ciss) (Max) @ Vds1370 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]250 W
Rds On (Max) @ Id, Vgs690 mOhm
Supplier Device PackageH2Pak-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 10.31
10$ 8.84
100$ 7.37
500$ 6.50
Digi-Reel® 1$ 10.31
10$ 8.84
100$ 7.37
500$ 6.50
Tape & Reel (TR) 1000$ 5.85
NewarkEach (Supplied on Cut Tape) 1$ 12.89
10$ 10.29
25$ 10.26
50$ 9.58
100$ 8.99
250$ 8.81
500$ 8.51
1000$ 8.47

Description

General part information

STH13N120K5-2AG Series

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.