STH13N120K5-2AG Series

Automotive-grade N-channel 1200 V, 0,62 Ohm typ., 12 A MDmesh K5 Power MOSFET in an H2PAK-2 package

Catalog

Automotive-grade N-channel 1200 V, 0,62 Ohm typ., 12 A MDmesh K5 Power MOSFET in an H2PAK-2 package

Part	FET Type	Technology	Mounting Type	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs
STMicroelectronics STH13N120K5-2AG	N-Channel	MOSFET (Metal Oxide)	Surface Mount	250 W	1200 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	H2Pak-2	5 V	44.2 nC	12 A	30 V	10 V	-55 °C	150 °C	1370 pF	690 mOhm

Catalog

Automotive-grade N-channel 1200 V, 0,62 Ohm typ., 12 A MDmesh K5 Power MOSFET in an H2PAK-2 package

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.