IKZA75N65EH7XKSA1
ActiveHARD-SWITCHING 650 V, 75 A TRENCHSTOP™ IGBT7 H7 DISCRETE WITH ANTI-PARALLEL DIODE IN TO247-4 PACKAGE TECHNOLOGY
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IKZA75N65EH7XKSA1
ActiveHARD-SWITCHING 650 V, 75 A TRENCHSTOP™ IGBT7 H7 DISCRETE WITH ANTI-PARALLEL DIODE IN TO247-4 PACKAGE TECHNOLOGY
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Technical Specifications
Parameters and characteristics for this part
| Specification | IKZA75N65EH7XKSA1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Current - Collector Pulsed (Icm) | 300 A |
| Gate Charge | 152 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | TO-247-4 |
| Power - Max [Max] | 338 W |
| Reverse Recovery Time (trr) | 56 ns |
| Supplier Device Package | PG-TO247-4-3 |
| Switching Energy | 840 µJ, 750 µJ |
| Td (on/off) @ 25°C | 26 ns, 199 ns |
| Test Condition | 75 A, 15 V, 10 Ohm, 400 V |
| Vce(on) (Max) @ Vge, Ic | 1.65 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IKZA75 Series
Hard-switching 650 V, 75 ATRENCHSTOP™ IGBT7H7discretein TO247-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant improvements over its predecessor generations.
Documents
Technical documentation and resources