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HARD-SWITCHING 650 V, 75 A TRENCHSTOP™ IGBT7 H7 DISCRETE WITH ANTI-PARALLEL DIODE IN TO247-4 PACKAGE TECHNOLOGY
| Part | Voltage - Collector Emitter Breakdown (Max) | Reverse Recovery Time (trr) | Package / Case | Supplier Device Package | Mounting Type | Current - Collector (Ic) (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | IGBT Type | Gate Charge | Test Condition | Switching Energy | Td (on/off) @ 25°C | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 650 V | 56 ns | TO-247-4 | PG-TO247-4-3 | Through Hole | 80 A | -40 C | 175 °C | 1.65 V | 300 A | Trench Field Stop | 152 nC | 10 Ohm 15 V 75 A 400 V | 750 µJ 840 µJ | 26 ns 199 ns | 338 W |