EL7154CSZ-T13

Obsolete

Renesas Electronics Corporation

HIGH SPEED, MONOLITHIC PIN DRIVER

EL7154CSZ-T13

Obsolete

Renesas Electronics Corporation

HIGH SPEED, MONOLITHIC PIN DRIVER

Description Specifications Series Pricing CAD Documents

Description

General part information

EL7154 Series

The EL7154 three-state pin driver is particularly well suited for ATE and level shifting applications. The 4A peak drive capability, makes the EL7154 an excellent choice when driving High-Speed capacitive lines. The P-Channel MOSFET is completely isolated from the power supply, providing a high degree of flexibility. Pin (7) can be grounded, and the output can be taken from pin (8) when a source follower output is desired. The N-Channel MOSFET has an isolated drain, but shares a common bus with pre-drivers and level shifter circuits. This is necessary to ensure that the N-Channel device can turn off effectively when VLgoes below GND. In some power-FET and IGBT applications, negative drive is desirable to insure effective turn-off. The EL7154 can be used in these applications by returning VLto a moderate negative potential.

Technical Specifications

Parameters and characteristics for this part

Specification	EL7154CSZ-T13

Channel Type	Synchronous
Current - Peak Output (Sink)	4 A
Current - Peak Output (Source)	4 A
Driven Configuration	Low-Side, High-Side
Fall Time (Typ)	4 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
Input Type	Non-Inverting
Logic Voltage - VIH	2.4 V
Logic Voltage - VIL	0.6 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	125 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	4 ns
Voltage - Supply (Maximum)	16 V
Voltage - Supply (Minimum)	4.5 V

EL7154 Series

Part	Gate Type	Gate Channel	Fall Time (Typ)	Rise Time (Typ)	Number of Drivers	Input Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Current - Peak Output (Source)	Current - Peak Output (Sink)	Logic Voltage - VIL	Logic Voltage - VIH	Channel Type	Driven Configuration	Package Name	Mounting Type	Package Length	Package Width	Operating Temperature (Max)	Operating Temperature (Min)
Renesas Electronics Corporation EL7154CSZ-T13	IGBT MOSFET N-Channel MOSFET	N-Channel	4 ns	4 ns	2	Non-Inverting	4.5 V	16 V	4 A	4 A	0.6 V	2.4 V	Synchronous	High-Side Low-Side	8-SOIC	Surface Mount	0.154 in	3.9 mm	125 °C	-40 °C
Renesas Electronics Corporation EL7154CSZ	IGBT MOSFET N-Channel MOSFET	N-Channel	4 ns	4 ns	2	Non-Inverting	4.5 V	16 V	4 A	4 A	0.6 V	2.4 V	Synchronous	High-Side Low-Side	8-SOIC	Surface Mount	0.154 in	3.9 mm	125 °C	-40 °C
Renesas Electronics Corporation EL7154CS-T7	IGBT MOSFET	N-Channel	4 ns	4 ns	2	Non-Inverting	4.5 V	16 V	4 A	4 A	0.6 V	2.4 V	Synchronous	High-Side Low-Side	8-SOIC	Surface Mount	0.154 in	3.9 mm	125 °C	-40 °C
Renesas Electronics Corporation EL7154CS-T13	IGBT MOSFET	N-Channel	4 ns	4 ns	2	Non-Inverting	4.5 V	16 V	4 A	4 A	0.6 V	2.4 V	Synchronous	High-Side Low-Side	8-SOIC	Surface Mount	0.154 in	3.9 mm	125 °C	-40 °C
Renesas Electronics Corporation EL7154CSZ-T7	IGBT MOSFET	N-Channel	4 ns	4 ns	2	Non-Inverting	4.5 V	16 V	4 A	4 A	0.6 V	2.4 V	Synchronous	High-Side Low-Side	8-SOIC	Surface Mount	0.154 in	3.9 mm	125 °C	-40 °C
Renesas Electronics Corporation EL7154CS	IGBT MOSFET	N-Channel	4 ns	4 ns	2	Non-Inverting	4.5 V	16 V	4 A	4 A	0.6 V	2.4 V	Synchronous	High-Side Low-Side	8-SOIC	Surface Mount	0.154 in	3.9 mm	125 °C	-40 °C
Renesas Electronics Corporation EL7154CN	IGBT MOSFET N-Channel MOSFET	N-Channel	4 ns	4 ns	2	Non-Inverting	4.5 V	16 V	4 A	4 A	0.6 V	2.4 V	Synchronous	High-Side Low-Side	8-DIP 8-PDIP	Through Hole	0.3 in	7.62 mm	125 °C	-40 °C

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

EL7154CSZ-T13 | Datasheet

EL7154 Datasheet