
EL7154 Series
Manufacturer: Renesas Electronics Corporation
HIGH SPEED, MONOLITHIC PIN DRIVER
| Part | Gate Type | Gate Channel | Fall Time (Typ) | Rise Time (Typ) | Number of Drivers | Input Type | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Current - Peak Output (Source) | Current - Peak Output (Sink) | Logic Voltage - VIL | Logic Voltage - VIH | Channel Type | Driven Configuration | Package Name | Mounting Type | Package Length | Package Width | Operating Temperature (Max) | Operating Temperature (Min) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | IGBT MOSFET N-Channel MOSFET | N-Channel | 4 ns | 4 ns | 2 | Non-Inverting | 4.5 V | 16 V | 4 A | 4 A | 0.6 V | 2.4 V | Synchronous | High-Side Low-Side | 8-SOIC | Surface Mount | 0.154 in | 3.9 mm | 125 °C | -40 °C |
Renesas Electronics Corporation | IGBT MOSFET N-Channel MOSFET | N-Channel | 4 ns | 4 ns | 2 | Non-Inverting | 4.5 V | 16 V | 4 A | 4 A | 0.6 V | 2.4 V | Synchronous | High-Side Low-Side | 8-SOIC | Surface Mount | 0.154 in | 3.9 mm | 125 °C | -40 °C |
Renesas Electronics Corporation | IGBT MOSFET | N-Channel | 4 ns | 4 ns | 2 | Non-Inverting | 4.5 V | 16 V | 4 A | 4 A | 0.6 V | 2.4 V | Synchronous | High-Side Low-Side | 8-SOIC | Surface Mount | 0.154 in | 3.9 mm | 125 °C | -40 °C |
Renesas Electronics Corporation | IGBT MOSFET | N-Channel | 4 ns | 4 ns | 2 | Non-Inverting | 4.5 V | 16 V | 4 A | 4 A | 0.6 V | 2.4 V | Synchronous | High-Side Low-Side | 8-SOIC | Surface Mount | 0.154 in | 3.9 mm | 125 °C | -40 °C |
Renesas Electronics Corporation | IGBT MOSFET | N-Channel | 4 ns | 4 ns | 2 | Non-Inverting | 4.5 V | 16 V | 4 A | 4 A | 0.6 V | 2.4 V | Synchronous | High-Side Low-Side | 8-SOIC | Surface Mount | 0.154 in | 3.9 mm | 125 °C | -40 °C |
Renesas Electronics Corporation | IGBT MOSFET | N-Channel | 4 ns | 4 ns | 2 | Non-Inverting | 4.5 V | 16 V | 4 A | 4 A | 0.6 V | 2.4 V | Synchronous | High-Side Low-Side | 8-SOIC | Surface Mount | 0.154 in | 3.9 mm | 125 °C | -40 °C |
Renesas Electronics Corporation | IGBT MOSFET N-Channel MOSFET | N-Channel | 4 ns | 4 ns | 2 | Non-Inverting | 4.5 V | 16 V | 4 A | 4 A | 0.6 V | 2.4 V | Synchronous | High-Side Low-Side | 8-DIP 8-PDIP | Through Hole | 0.3 in | 7.62 mm | 125 °C | -40 °C |