Specification | Value |
---|---|
Current - Average Rectified (Io) (per Diode) | 3 A |
Current - Reverse Leakage @ Vr | 100 çA |
Diode Configuration | 4 Independent |
Mounting Type | Through Hole |
Operating Temperature - Junction [Max] | 70 °C |
Operating Temperature - Junction [Min] | -1.0000000036274937e-15 °C |
Package / Case | 8-DIP |
Package / Case | 0.30000001192092896 in |
Package / Case | 7.619999885559082 mm |
Reverse Recovery Time (trr) | 20 ns |
Speed | Fast Recovery |
Speed | 200 mA |
Supplier Device Package | 8-PDIP |
Technology | Schottky |
Voltage - DC Reverse (Vr) (Max) [Max] | 50 V |
Voltage - Forward (Vf) (Max) @ If | 1.2000000476837158 V |
Specification | Value |
---|---|
Current - Average Rectified (Io) (per Diode) | 3 A |
Current - Reverse Leakage @ Vr | 100 çA |
Diode Configuration | 4 Independent |
Mounting Type | Through Hole |
Operating Temperature - Junction [Max] | 70 °C |
Operating Temperature - Junction [Min] | -1.0000000036274937e-15 °C |
Package / Case | 8-DIP |
Package / Case | 0.30000001192092896 in |
Package / Case | 7.619999885559082 mm |
Reverse Recovery Time (trr) | 20 ns |
Speed | Fast Recovery |
Speed | 200 mA |
Supplier Device Package | 8-PDIP |
Technology | Schottky |
Voltage - DC Reverse (Vr) (Max) [Max] | 50 V |
Voltage - Forward (Vf) (Max) @ If | 1.2000000476837158 V |