Specification	NXPLQSC106506Q

Capacitance	250 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage	230 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Package / Case	TO-220-2
Package Name	TO-220AC
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Voltage - Forward (Vf) (Max)	1.85 V

NXPLQSC Series

Part	Technology	Voltage - DC Reverse (Vr) (Max)	Operating Temperature - Junction (Max)	Package Name	Capacitance	Voltage - Forward (Vf) (Max)	Package / Case	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Diode Pair Count	Diode Configuration	Current - Average Rectified (Io) (per Diode)
WeEn Semiconductors NXPLQSC10650Q	SiC (Silicon Carbide) Schottky	650 V	175 °C	TO-220AC	250 pF	1.85 V	TO-220-2	10 A	Through Hole	230 µA	500 mA	No Recovery Time	500 mA 500 mA
WeEn Semiconductors NXPLQSC30650WQ	SiC (Silicon Carbide) Schottky	650 V	175 °C	TO-247-3		1.95 V	TO-247-3		Through Hole	250 µA	500 mA	No Recovery Time	500 mA 500 mA	1 pair	Common Cathode	30 A
WeEn Semiconductors NXPLQSC20650W6Q	SiC (Silicon Carbide) Schottky	650 V	175 °C	TO-247-3		1.85 V	TO-247-3		Through Hole	230 µA	500 mA	No Recovery Time	500 mA 500 mA	1 pair	Common Cathode	20 A
WeEn Semiconductors NXPLQSC106506Q	SiC (Silicon Carbide) Schottky	650 V	175 °C	TO-220AC	250 pF	1.85 V	TO-220-2	10 A	Through Hole	230 µA	500 mA	No Recovery Time	500 mA 500 mA
WeEn Semiconductors NXPLQSC30650W6Q	SiC (Silicon Carbide) Schottky	650 V	175 °C	TO-247-3		1.95 V	TO-247-3		Through Hole	250 µA	500 mA	No Recovery Time	500 mA 500 mA	1 pair	Common Cathode	30 A

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