NXPLQSC Series

Catalog

DIODE SIL CARB 650V 10A TO220AC

Part	Technology	Voltage - DC Reverse (Vr) (Max)	Operating Temperature - Junction (Max)	Package Name	Capacitance	Voltage - Forward (Vf) (Max)	Package / Case	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Diode Pair Count	Diode Configuration	Current - Average Rectified (Io) (per Diode)
WeEn Semiconductors NXPLQSC10650Q	SiC (Silicon Carbide) Schottky	650 V	175 °C	TO-220AC	250 pF	1.85 V	TO-220-2	10 A	Through Hole	230 µA	500 mA	No Recovery Time	500 mA 500 mA
WeEn Semiconductors NXPLQSC30650WQ	SiC (Silicon Carbide) Schottky	650 V	175 °C	TO-247-3		1.95 V	TO-247-3		Through Hole	250 µA	500 mA	No Recovery Time	500 mA 500 mA	1 pair	Common Cathode	30 A
WeEn Semiconductors NXPLQSC20650W6Q	SiC (Silicon Carbide) Schottky	650 V	175 °C	TO-247-3		1.85 V	TO-247-3		Through Hole	230 µA	500 mA	No Recovery Time	500 mA 500 mA	1 pair	Common Cathode	20 A
WeEn Semiconductors NXPLQSC106506Q	SiC (Silicon Carbide) Schottky	650 V	175 °C	TO-220AC	250 pF	1.85 V	TO-220-2	10 A	Through Hole	230 µA	500 mA	No Recovery Time	500 mA 500 mA
WeEn Semiconductors NXPLQSC30650W6Q	SiC (Silicon Carbide) Schottky	650 V	175 °C	TO-247-3		1.95 V	TO-247-3		Through Hole	250 µA	500 mA	No Recovery Time	500 mA 500 mA	1 pair	Common Cathode	30 A