TSM301K12CQ RFG

Obsolete

Taiwan Semiconductor Corporation

MOSFET P-CH 20V 4.5A 6TDFN

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Obsolete

Taiwan Semiconductor Corporation

MOSFET P-CH 20V 4.5A 6TDFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM301K12CQ RFG

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	5.2 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-VDFN Exposed Pad
Power Dissipation (Max)	6.5 W
Rds On (Max) @ Id, Vgs	94 mOhm
Supplier Device Package	6-TDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	500 mV

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package
Taiwan Semiconductor Corporation TSM301K12CQ RFG	94 mOhm	500 mV	-55 °C	150 °C	6.5 W	4.5 A	20 V	12 V	Surface Mount	10 nC	P-Channel	6-VDFN Exposed Pad	5.2 pF	MOSFET (Metal Oxide)	1.8 V 4.5 V	6-TDFN (2x2)

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General part information

P-Channel 20 V 4.5A (Ta) 6.5W (Tc) Surface Mount 6-TDFN (2x2)

Technical documentation and resources

No documents available