MOSFET P-CH 20V 4.5A 6TDFN
| Part | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs (Max) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Technology | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 94 mOhm | 500 mV | -55 °C | 150 °C | 6.5 W | 4.5 A | 20 V | 12 V | Surface Mount | 10 nC | P-Channel | 6-VDFN Exposed Pad | 5.2 pF | MOSFET (Metal Oxide) | 1.8 V 4.5 V | 6-TDFN (2x2) |