SSM6N58NU,LF

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A 6UDFN

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A 6UDFN

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6N58NU,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	1.8 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	1.8 nC
Input Capacitance (Ciss) (Max) @ Vds	129 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1 W
Rds On (Max) @ Id, Vgs	84 mOhm
Supplier Device Package	6-UDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Power - Max [Max]	Operating Temperature	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	FET Feature	FET Feature	Vgs(th) (Max) @ Id	Configuration	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage SSM6N58NU,LF	1 W	150 °C	30 V	1.8 nC	4 A	Surface Mount	6-UDFN (2x2)	MOSFET (Metal Oxide)	84 mOhm	1.8 V	Logic Level Gate	1 V	2 N-Channel (Dual)	129 pF

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General part information

Mosfet Array 30V 4A 1W Surface Mount 6-UDFN (2x2)

Technical documentation and resources