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MOSFET 2N-CH 30V 4A 6UDFN
| Part | Power - Max [Max] | Operating Temperature | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | Technology | Rds On (Max) @ Id, Vgs | FET Feature | FET Feature | Vgs(th) (Max) @ Id | Configuration | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 1 W | 150 °C | 30 V | 1.8 nC | 4 A | Surface Mount | 6-UDFN (2x2) | MOSFET (Metal Oxide) | 84 mOhm | 1.8 V | Logic Level Gate | 1 V | 2 N-Channel (Dual) | 129 pF |