SSM6K514NU,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 12A 6UDFNB

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 12A 6UDFNB

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6K514NU,LF

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1110 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs [Max]	11.6 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage SSM6K514NU,LF	11.6 mOhm	7.5 nC	MOSFET (Metal Oxide)	150 °C	2.5 W	40 V	4.5 V 10 V	N-Channel	6-UDFNB (2x2)	12 A	20 V	Surface Mount	1110 pF

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General part information

N-Channel 40 V 12A (Ta) 2.5W (Ta) Surface Mount 6-UDFNB (2x2)

Technical documentation and resources

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