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MOSFET N-CH 40V 12A 6UDFNB
| Part | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Operating Temperature | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 11.6 mOhm | 7.5 nC | MOSFET (Metal Oxide) | 150 °C | 2.5 W | 40 V | 4.5 V 10 V | N-Channel | 6-UDFNB (2x2) | 12 A | 20 V | Surface Mount | 1110 pF |