IPP65R110CFDXKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 700V 31.2A TO220-3

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Obsolete

Infineon Technologies

MOSFET N-CH 700V 31.2A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP65R110CFDXKSA1

Current - Continuous Drain (Id) @ 25°C	31.2 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	118 nC
Input Capacitance (Ciss) (Max) @ Vds	3240 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	277.8 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Technology	Grade	Qualification
Infineon Technologies IPP65R110CFDXKSA1	277.8 W	110 mOhm	700 V	PG-TO220-3	118 nC	4.5 V	31.2 A	TO-220-3	3240 pF	10 V	N-Channel	Through Hole	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)
Infineon Technologies IPP65R110CFDAAKSA1	277.8 W	110 mOhm	650 V	PG-TO220-3	118 nC	4.5 V	31.2 A	TO-220-3	3240 pF	10 V	N-Channel	Through Hole	-40 °C	150 °C	20 V	MOSFET (Metal Oxide)	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 700 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3

Technical documentation and resources