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MOSFET N-CH 700V 31.2A TO220-3
| Part | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Technology | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 277.8 W | 110 mOhm | 700 V | PG-TO220-3 | 118 nC | 4.5 V | 31.2 A | TO-220-3 | 3240 pF | 10 V | N-Channel | Through Hole | -55 °C | 150 °C | 20 V | MOSFET (Metal Oxide) | ||
Infineon Technologies | 277.8 W | 110 mOhm | 650 V | PG-TO220-3 | 118 nC | 4.5 V | 31.2 A | TO-220-3 | 3240 pF | 10 V | N-Channel | Through Hole | -40 °C | 150 °C | 20 V | MOSFET (Metal Oxide) | Automotive | AEC-Q101 |