TSM4936DCS RLG

Taiwan Semiconductor Corporation

MOSFET 2N-CH 30V 5.9A 8SOP

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Taiwan Semiconductor Corporation

MOSFET 2N-CH 30V 5.9A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	TSM4936DCS RLG

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5.9 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	13 nC
Input Capacitance (Ciss) (Max) @ Vds	610 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	3 W
Rds On (Max) @ Id, Vgs [Max]	36 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Power - Max [Max]	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C
Taiwan Semiconductor Corporation TSM4936DCS RLG	3 W	2 N-Channel (Dual)	-55 °C	150 °C	MOSFET (Metal Oxide)	610 pF	30 V	8-SOIC	3.9 mm	0.154 in	8-SOP	36 mOhm	13 nC	3 V	Surface Mount	5.9 A

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General part information

Mosfet Array 30V 5.9A (Ta) 3W Surface Mount 8-SOP

Technical documentation and resources

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