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MOSFET 2N-CH 30V 5.9A 8SOP
| Part | Power - Max [Max] | Configuration | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Mounting Type | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 3 W | 2 N-Channel (Dual) | -55 °C | 150 °C | MOSFET (Metal Oxide) | 610 pF | 30 V | 8-SOIC | 3.9 mm | 0.154 in | 8-SOP | 36 mOhm | 13 nC | 3 V | Surface Mount | 5.9 A |