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IPW60R190E6FKSA1 - PG-TO247-3

IPW60R190E6FKSA1

NRND
Infineon Technologies

COOLMOS™ E6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 190 MOHM;

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IPW60R190E6FKSA1 - PG-TO247-3

IPW60R190E6FKSA1

NRND
Infineon Technologies

COOLMOS™ E6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 190 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPW60R190E6FKSA1
Current - Continuous Drain (Id) @ 25°C20.2 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]63 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1400 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]151 W
Rds On (Max) @ Id, Vgs190 mOhm
Supplier Device PackagePG-TO247-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 4.26
10$ 2.83
100$ 2.02
500$ 1.82
NewarkEach 1$ 2.96
10$ 2.91
25$ 2.86
50$ 2.81
100$ 2.76
480$ 2.70
720$ 2.65

Description

General part information

IPW60R190 Series

CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.

Documents

Technical documentation and resources