IPW60R190 Series

Catalog

COOLMOS™ E6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 190 MOHM;

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id
Infineon Technologies IPW60R190E6FKSA1	20.2 A	PG-TO247-3-1	3.5 V	Through Hole	600 V	190 mOhm	-55 °C	150 °C	63 nC	MOSFET (Metal Oxide)	10 V	20 V	TO-247-3	1400 pF	N-Channel	151 W
Infineon Technologies IPW60R190P6FKSA1	20.2 A	PG-TO247-3		Through Hole	600 V	190 mOhm	-55 °C	150 °C	11 nC	MOSFET (Metal Oxide)	10 V	20 V	TO-247-3	1750 pF	N-Channel	151 W	4.5 V