IPI60R099CPAAKSA1

Obsolete

Infineon Technologies

TRANS MOSFET N-CH 600V 31A 3-PIN(3+TAB) TO-262 TUBE AUTOMOTIVE AEC-Q101

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Obsolete

Infineon Technologies

TRANS MOSFET N-CH 600V 31A 3-PIN(3+TAB) TO-262 TUBE AUTOMOTIVE AEC-Q101

Technical Specifications

Parameters and characteristics for this part

Specification	IPI60R099CPAAKSA1

Current - Continuous Drain (Id) @ 25°C	31 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Input Capacitance (Ciss) (Max) @ Vds	2800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	255 W
Rds On (Max) @ Id, Vgs [Max]	105 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPI60R099CPXKSA1	3.5 V	80 nC	N-Channel	255 W	10 V	600 V	31 A	2800 pF	Through Hole	-55 °C	150 °C	20 V	I2PAK TO-262-3 Long Leads TO-262AA	PG-TO262-3	MOSFET (Metal Oxide)	99 mOhm
Infineon Technologies IPI60R099CPAAKSA1	3.5 V	80 nC	N-Channel	255 W	10 V	600 V	31 A	2800 pF	Through Hole	-40 °C	150 °C	20 V	I2PAK TO-262-3 Long Leads TO-262AA	PG-TO262-3	MOSFET (Metal Oxide)		105 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 31A (Tc) 255W (Tc) Through Hole PG-TO262-3

Technical documentation and resources

No documents available