IPI60R099 Series

Catalog

MOSFET N-CH 600V 31A TO262-3

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPI60R099CPXKSA1	3.5 V	80 nC	N-Channel	255 W	10 V	600 V	31 A	2800 pF	Through Hole	-55 °C	150 °C	20 V	I2PAK TO-262-3 Long Leads TO-262AA	PG-TO262-3	MOSFET (Metal Oxide)	99 mOhm
Infineon Technologies IPI60R099CPAAKSA1	3.5 V	80 nC	N-Channel	255 W	10 V	600 V	31 A	2800 pF	Through Hole	-40 °C	150 °C	20 V	I2PAK TO-262-3 Long Leads TO-262AA	PG-TO262-3	MOSFET (Metal Oxide)		105 mOhm