SSM3K316T(TE85L,F)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 4A TSM

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 4A TSM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K316T(TE85L,F)

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	1.8 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.3 nC
Input Capacitance (Ciss) (Max) @ Vds	270 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs	53 mOhm
Supplier Device Package	TSM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Mounting Type	FET Type	Technology	Operating Temperature	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage SSM3K316T(TE85L,F)	TSM	4 A	SC-59 SOT-23-3 TO-236-3	1 V	270 pF	12 V	700 mW	Surface Mount	N-Channel	MOSFET (Metal Oxide)	150 °C	53 mOhm	1.8 V 10 V	30 V	4.3 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 4A (Ta) 700mW (Ta) Surface Mount TSM

Technical documentation and resources