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MOSFET N-CH 30V 4A TSM
| Part | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Package / Case | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Power Dissipation (Max) | Mounting Type | FET Type | Technology | Operating Temperature | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | TSM | 4 A | SC-59 SOT-23-3 TO-236-3 | 1 V | 270 pF | 12 V | 700 mW | Surface Mount | N-Channel | MOSFET (Metal Oxide) | 150 °C | 53 mOhm | 1.8 V 10 V | 30 V | 4.3 nC |