STI16N65M5

Obsolete

STMicroelectronics

MOSFET N-CH 650V 12A I2PAK

Search across all available documentation for this part.

Obsolete

STMicroelectronics

MOSFET N-CH 650V 12A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STI16N65M5

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds	1250 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	279 mOhm
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Operating Temperature	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STI16N65M5	279 mOhm	90 W	31 nC	1250 pF	5 V	I2PAK	I2PAK TO-262-3 Long Leads TO-262AA	12 A	MOSFET (Metal Oxide)	650 V	N-Channel	Through Hole	150 °C	25 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 12A (Tc) 90W (Tc) Through Hole I2PAK

Technical documentation and resources